PART |
Description |
Maker |
NTE7157 |
Integrated Circuit Low Frequency Power Amplifier
|
NTE[NTE Electronics]
|
NTE928SM NTE928M |
Integrated Circuit Low Power Dual Operational Amplifier
|
NTE[NTE Electronics]
|
NTE1468 |
Integrated Circuit Audio, Low Power Output Amplifier
|
NTE[NTE Electronics]
|
NTE7155 |
Integrated Circuit Dual Low-Voltage Power Amplifier
|
NTE[NTE Electronics]
|
KIA78R05 KIA78R05F KIA78R15F KIA78R06F KIA78R08F K |
Quadruple 2-Input Positive-OR Gates 14-TSSOP -40 to 85 正输入或14-TSSOP封装40℃到85 BIPOLAR LINEAR INTEGRATED CIRCUIT (5 TERMINAL LOW DROP VOLTAGE REGULATOR) BIPOLAR LINEAR INTEGRATED CIRCUIT (5 TERMINAL LOW DROP VOLTAGE REGULATOR) 1A 5-Terminal Low Drop(ON/OFF Controllable)
|
TE Connectivity, Ltd. KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
NTE7061 |
Integrated Circuit Dual 5.3W Audio Power Amplifier Circuit
|
NTE[NTE Electronics]
|
S1T2410B01 S1T2410B02 DS_S1T2410B01 S1T2410B02-D0B |
From old datasheet system bipolar integrated circuit designed as a telephone bell replacement Low drain current,Adjustable 2-frequency tone,Built-in hysteresis bipolar integrated circuit designed as telephone bell replacement
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KA2293 KA2293D KA22293Q KA22293 |
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER LINEAR INTEGRATED CIRCUIT
|
SAMSUNG[Samsung semiconductor]
|
TC40175BF TC40175BP TC40175 |
C2MOS DIGITAL INTEGRATED CIRCUIT QUAD D-TYPE FLIP-FLOP CMOS Digital Integrated Circuit / Silicon Monolithic
|
Integrated Circuit Solution Inc TOSHIBA
|
MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|